Microsemi Corporation 2N5582
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
800mA
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 800mA 500mW Through Hole TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
NPN
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 50mA, 500mA
Supplier Device Package:
TO-46-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 200°C (TJ)
Power - Max:
500mW
Customer Reference:
Package / Case:
TO-206AB, TO-46-3 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET12634363. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N5582 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N5582. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N5582.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12634363 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12634363.
Yes. We ship 2N5582 Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N5582. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 800ma. It features bipolar (bjt) transistor npn 50v 800ma 500mw through hole to-46-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a npn type. The product is available in through hole configuration. The 1v @ 50ma, 500ma is the maximum Vce saturation. to-46-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 500mw. Moreover, the product comes in to-206ab, to-46-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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