Microsemi Corporation 2N3486A
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 400mW Through Hole TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Supplier Device Package:
TO-46-3
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
400mW
Customer Reference:
Package / Case:
TO-206AB, TO-46-3 Metal Can
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET12634350. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with 2N3486A directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation 2N3486A. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation 2N3486A.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12634350 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12634350.
Yes. We ship 2N3486A Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is 2N3486A. It has typical 16 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 400mw through hole to-46-3. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. to-46-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 400mw. Moreover, the product comes in to-206ab, to-46-3 metal can. In addition, 10µa (icbo) is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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