Transistor Type:
NPN
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
25 W
Maximum Collector Emitter Saturation Voltage:
360 mV
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220F-3FS
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
2SC6144
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 10A 330MHz 25W Through Hole TO-220F-3FS
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 270mA, 2V
Transistor Type:
NPN
Frequency - Transition:
330MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
360mV @ 300mA, 6A
Supplier Device Package:
TO-220F-3FS
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
25W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
