Dimensions:
6.73 x 6.22 x 2.25mm
Maximum Collector Emitter Saturation Voltage:
3 V dc
Width:
6.22mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Continuous Collector Current:
2 A
Package Type:
DPAK
Number of Elements per Chip:
1
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Base Emitter Saturation Voltage:
4 V dc
Maximum Emitter Base Voltage:
5 V dc
Length:
6.73mm
Pin Count:
3 + Tab
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
100 V dc
Height:
2.25mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
20 Weeks
Base Part Number:
MJD117
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 2A, 3V
Transistor Type:
PNP - Darlington
Frequency - Transition:
25MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 4A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.75W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
