Minimum DC Current Gain:
500
Transistor Type:
NPN
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
80 V dc
Maximum Base Emitter Saturation Voltage:
3.5 V dc
Height:
20.35mm
Width:
4.9mm
Length:
15.2mm
Package Type:
SOT-93
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP141
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 80V 10A 125W Through Hole TO-247-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 40mA, 10A
Supplier Device Package:
TO-247-3
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
2mA
Manufacturer:
ON Semiconductor
