Minimum DC Current Gain:
140
Transistor Type:
PNP
Dimensions:
6.9 x 2.5 x 4.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
1 W
Maximum Collector Emitter Saturation Voltage:
-0.6 V
Maximum Collector Base Voltage:
-120 V
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
120 MHz
Height:
4.5mm
Width:
2.5mm
Length:
6.9mm
Package Type:
NMP
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Emitter Base Voltage:
-6 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SA1708
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 1A 120MHz 1W Through Hole 3-NMP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 100mA, 5V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 40mA, 400mA
Supplier Device Package:
3-NMP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
Power - Max:
1W
Customer Reference:
Package / Case:
SC-71
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
