ON Semiconductor SMMBT6521LT1G

SMMBT6521LT1G ON Semiconductor
SMMBT6521LT1G
SMMBT6521LT1G
ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
3.04 x 2.64 x 1.11mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
225 mW
Maximum Collector Emitter Saturation Voltage:
0.5 V dc
Maximum Collector Base Voltage:
40 V dc
Maximum Collector Emitter Voltage:
25 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
4 V
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum DC Collector Current:
100 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
13 Weeks
Base Part Number:
SMMBT6521
Detailed Description:
Bipolar (BJT) Transistor NPN 25V 100mA 225mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 2mA, 10V
Transistor Type:
NPN
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
25V
Packaging:
Tape & Reel (TR)
Power - Max:
225mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is SMMBT6521LT1G. The transistor is a npn type. The given dimensions of the product include 3.04 x 2.64 x 1.11mm. The product is available in surface mount configuration. Provides up to 225 mw maximum power dissipation. The product has a maximum 0.5 v dc collector emitter saturation voltage . Additionally, it has 40 v dc maximum collector base voltage. Whereas features a 25 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 4 v of maximum emitter base voltage. The package is a sort of sot-23. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 100 ma. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 13 weeks of manufacturer standard lead time. Base Part Number: smmbt6521. It features bipolar (bjt) transistor npn 25v 100ma 225mw surface mount sot-23-3 (to-236). Furthermore, 300 @ 2ma, 10v is the minimum DC current gain at given voltage. The 500mv @ 5ma, 50ma is the maximum Vce saturation. sot-23-3 (to-236) is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 25v. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 225mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 100ma. In addition, 500na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Compound Qualification 23/Jun/2019(PCN Assembly/Origin)
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MMBT,SMMBT6521LT1G(Datasheets)
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Pd-Coated Cu Wire Update 23/Sep/2015(PCN Design/Specification)
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SOT23 27/Sep/2016(PCN Design/Specification)

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