Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
60 W
Maximum Continuous Collector Current:
7 A
Maximum Collector Emitter Voltage:
400 V dc
Maximum Base Emitter Saturation Voltage:
1.2 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Emitter Base Voltage:
6 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
18 Weeks
Base Part Number:
BU406
Detailed Description:
Bipolar (BJT) Transistor NPN 200V 7A 10MHz 60W Through Hole TO-220
Transistor Type:
NPN
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 500mA, 5A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
60W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
7A
Current - Collector Cutoff (Max):
5mA
Manufacturer:
ON Semiconductor
