Transistor Type:
NPN
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Collector Emitter Saturation Voltage:
3 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
60 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
7 V dc
Package Type:
SOT-93
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
TIP3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 15A 2.5MHz 90W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2.5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3V @ 3.3A, 10A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
90W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
