Transistor Type:
NPN
Dimensions:
8.51 x 39.37 x 26.67mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
250 W
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Collector Base Voltage:
350 V
Maximum Collector Emitter Voltage:
200 V
Maximum Operating Frequency:
4 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum DC Collector Current:
16 A
Maximum Operating Temperature:
+200 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
45 Weeks
Base Part Number:
MJ15022
Detailed Description:
Bipolar (BJT) Transistor NPN 200V 16A 4MHz 250W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 8A, 4V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
250W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
