Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Saturation Voltage:
0.8 V dc
Maximum Collector Base Voltage:
10 V dc
Maximum Collector Emitter Voltage:
450 V
Maximum Base Emitter Saturation Voltage:
1.25 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
9 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE18008
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 8A 13MHz 125W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
14 @ 1A, 5V
Transistor Type:
NPN
Frequency - Transition:
13MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
700mV @ 900mA, 4.5V
Series:
SWITCHMODE™
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
