ON Semiconductor MJD31C1G

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJD31
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 3A 3MHz 1.56W Through Hole I-PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 3A, 4V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.2V @ 375mA, 3A
Supplier Device Package:
I-PAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.56W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD31C1G. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mjd31. It features bipolar (bjt) transistor npn 100v 3a 3mhz 1.56w through hole i-pak. Furthermore, 10 @ 3a, 4v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 3mhz. The product is available in through hole configuration. The 1.2v @ 375ma, 3a is the maximum Vce saturation. i-pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.56w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 3a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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Qualification Multiple Devices 24/Sep/2013(PCN Assembly/Origin)
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MJD31 (NPN), MJD32 (PNP)(Datasheets)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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