Transistor Type:
NPN
Dimensions:
15.2 x 4.9 x 20.35mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Saturation Voltage:
4 V dc
Maximum Collector Base Voltage:
200 V
Maximum Collector Emitter Voltage:
250 V
Maximum Base Emitter Saturation Voltage:
3.8 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 (Continuous) A, 30 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJH11020
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 200V 15A 3MHz 150W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
Transistor Type:
NPN - Darlington
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 150mA, 15A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
200V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
