Rohm Semiconductor 2SB1386T100Q

2SB1386T100Q Rohm Semiconductor
2SB1386T100Q
Rohm Semiconductor

Product Information

Base Part Number:
2SB1386
Detailed Description:
Bipolar (BJT) Transistor PNP 20V 5A 120MHz 2W Surface Mount MPT3
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 100mA, 4A
Supplier Device Package:
MPT3
Voltage - Collector Emitter Breakdown (Max):
20V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-243AA
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
500nA (ICBO)
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is 2SB1386T100Q. Base Part Number: 2sb1386. It features bipolar (bjt) transistor pnp 20v 5a 120mhz 2w surface mount mpt3. Furthermore, 120 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 1v @ 100ma, 4a is the maximum Vce saturation. mpt3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-243aa. The maximum collector current includes 5a. In addition, 500na (icbo) is the maximum current at collector cutoff. The rohm semiconductor's product offers user-desired applications.

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2SB1386/1412/1326(Datasheets)
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Mult Devices Marking 16/Apr/2018(PCN Design/Specification)

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