ON Semiconductor BDV65BG
Product Information
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V dc
Maximum Base Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-218
Number of Elements per Chip:
1
Maximum DC Collector Current:
10 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BDV65
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 100V 10A 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 5A, 4V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 20mA, 5A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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You can order ON Semiconductor brand products with BDV65BG directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BDV65BG. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BDV65BG.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET12140160 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12140160.
Yes. We ship BDV65BG Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BDV65BG. The transistor is a npn type. The given dimensions of the product include 10.53 x 4.83 x 15.75mm. The product is available in through hole configuration. Provides up to 125 w maximum power dissipation. The product has a maximum 2 v dc collector emitter saturation voltage . Additionally, it has 100 v dc maximum collector base voltage. Whereas features a 100 v dc of collector emitter voltage (max). In addition, the product has a maximum 2.5 v dc base emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-218. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 10 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bdv65. It features bipolar (bjt) transistor npn - darlington 100v 10a 125w through hole to-247. Furthermore, 1000 @ 5a, 4v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The 2v @ 20ma, 5a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 125w. Moreover, the product comes in to-247-3. The maximum collector current includes 10a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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