Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
2 x 1.6 x 0.83mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-165 mV
Maximum Collector Base Voltage:
-15 V
Maximum Collector Emitter Voltage:
12 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Height:
0.83mm
Width:
1.6mm
Length:
2mm
Package Type:
MCPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
3 A
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MCH31
Detailed Description:
Bipolar (BJT) Transistor PNP 12V 3A 280MHz 900mW Surface Mount 3-MCPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
280MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
165mV @ 30mA, 1.5A
Supplier Device Package:
3-MCPH
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Power - Max:
900mW
Customer Reference:
Package / Case:
SC-70, SOT-323
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
