Transistor Type:
PNP
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Collector Base Voltage:
230 V
Maximum Collector Emitter Voltage:
230 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 (Continuous) A, 25 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
42 Weeks
Base Part Number:
MJW1302
Detailed Description:
Bipolar (BJT) Transistor PNP 230V 15A 30MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 7A, 5V
Transistor Type:
PNP
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 1A, 10A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
230V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
50µA (ICBO)
Manufacturer:
ON Semiconductor