ON Semiconductor BD678G
Product Information
Minimum DC Current Gain:
750
Transistor Type:
PNP
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
4 A
Maximum Collector Emitter Voltage:
60 V dc
Height:
11.1mm
Width:
3mm
Length:
7.8mm
Package Type:
TO-225
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
BD678
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 60V 4A 40W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
750 @ 1.5A, 3V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 30mA, 1.5A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET12102818 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET12102818.
Yes. We ship BD678G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BD678G. It features up to 750 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 7.8 x 3 x 11.1mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 4 a continuous collector current . Whereas features a 60 v dc of collector emitter voltage (max). In addition, the height is 11.1mm. Furthermore, the product is 3mm wide. Its accurate length is 7.8mm. The package is a sort of to-225. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 2.5 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. Base Part Number: bd678. It features bipolar (bjt) transistor pnp - darlington 60v 4a 40w through hole to-225aa. Furthermore, 750 @ 1.5a, 3v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The 2.5v @ 30ma, 1.5a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 4a. In addition, 500µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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