Dimensions:
3.04 x 1.4 x 1.01mm
Maximum Collector Emitter Saturation Voltage:
-0.04 V
Width:
1.4mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
SOT-23
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-140 V
Maximum Base Emitter Saturation Voltage:
-0.95 V
Maximum Emitter Base Voltage:
-7 V
Length:
3.04mm
Maximum DC Collector Current:
2 A
Pin Count:
3
Minimum DC Current Gain:
50
Mounting Type:
Surface Mount
Maximum Power Dissipation:
710 mW
Maximum Collector Emitter Voltage:
100 V
Height:
1.01mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
52 Weeks
Base Part Number:
NSS1C200
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 2A 120MHz 490mW Surface Mount SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 50mA, 2V
Transistor Type:
PNP
Frequency - Transition:
120MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
250mV @ 200mA, 2A
Supplier Device Package:
SOT-23-3 (TO-236)
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
490mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
