Dimensions:
3.1 x 1.7 x 1.1mm
Maximum Collector Emitter Saturation Voltage:
0.135 V
Width:
1.7mm
Transistor Configuration:
Single
Maximum Operating Frequency:
140 MHz
Package Type:
ChipFET
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
40 V
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Emitter Base Voltage:
6 V
Length:
3.1mm
Maximum DC Collector Current:
6 A
Pin Count:
8
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
830 mW
Maximum Collector Emitter Voltage:
40 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
NSS40601
Detailed Description:
Bipolar (BJT) Transistor NPN 40V 6A 140MHz 830mW Surface Mount ChipFET™
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 1A, 2V
Transistor Type:
NPN
Frequency - Transition:
140MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
135mV @ 400mA, 4A
Supplier Device Package:
ChipFET™
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
830mW
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Current - Collector (Ic) (Max):
6A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
