Minimum DC Current Gain:
80
Transistor Type:
PNP
Dimensions:
2.9 x 1.5 x 1.1mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 mW
Maximum Collector Emitter Saturation Voltage:
-120 mV
Maximum Collector Base Voltage:
-20 V
Maximum Collector Emitter Voltage:
15 V
Maximum Operating Frequency:
250 MHz
Height:
1.1mm
Width:
1.5mm
Length:
2.9mm
Package Type:
CP
Number of Elements per Chip:
1
Maximum DC Collector Current:
700 mA
Maximum Emitter Base Voltage:
-5 V
Maximum Operating Temperature:
+125 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2SB815
Detailed Description:
Bipolar (BJT) Transistor PNP 15V 700mA 250MHz 200mW Surface Mount 3-CP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 50mA, 2V
Transistor Type:
PNP
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
80mV @ 10mA, 100mA
Supplier Device Package:
3-CP
Voltage - Collector Emitter Breakdown (Max):
15V
Packaging:
Cut Tape (CT)
Operating Temperature:
125°C (TJ)
Power - Max:
200mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
700mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
