ON Semiconductor MJB45H11T4G

ON Semiconductor

Product Information

Dimensions:
10.29 x 9.65 x 4.83mm
Maximum Collector Emitter Saturation Voltage:
1 V dc
Width:
9.65mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Continuous Collector Current:
10 A
Package Type:
D2PAK
Number of Elements per Chip:
1
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Length:
10.29mm
Pin Count:
2 + Tab
Minimum DC Current Gain:
40
Mounting Type:
Surface Mount
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
80 V dc
Height:
4.83mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
10 Weeks
Base Part Number:
MJB45
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 10A 40MHz 2W Surface Mount D²PAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 4A, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1V @ 400mA, 8A
Supplier Device Package:
D²PAK
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
10µA
Manufacturer:
ON Semiconductor
RoHs Compliant
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is MJB45H11T4G. The given dimensions of the product include 10.29 x 9.65 x 4.83mm. The product has a maximum 1 v dc collector emitter saturation voltage . Furthermore, the product is 9.65mm wide. The product complies with automotive standard - aec-q101. The product offers single transistor configuration. The product has a maximum 10 a continuous collector current . The package is a sort of d2pak. It consists of 1 elements per chip. The product is available in single configuration. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. In addition, the product has a maximum 1.5 v dc base emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. Its accurate length is 10.29mm. It contains 2 + tab pins. It features up to 40 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 50 w maximum power dissipation. Whereas features a 80 v dc of collector emitter voltage (max). In addition, the height is 4.83mm. Whereas, the minimum operating temperature of the product is -55 °c. It has typical 10 weeks of manufacturer standard lead time. Base Part Number: mjb45. It features bipolar (bjt) transistor pnp 80v 10a 40mhz 2w surface mount d²pak. Furthermore, 40 @ 4a, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 40mhz. The 1v @ 400ma, 8a is the maximum Vce saturation. d²pak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum collector current includes 10a. In addition, 10µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet MJB45H11T4G(Technical Reference)
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Qualification Wafer Site 20/Jun/2014(PCN Assembly/Origin)
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MJB(44,45)H11(Datasheets)
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Mult Devices 14/Jul/2019(PCN Design/Specification)
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Cancellation 13/Aug/2020(PCN Design/Specification)

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FAQs

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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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