Minimum DC Current Gain:
150
Transistor Type:
NPN
Dimensions:
15.2 x 4.9 x 16.2mm
Mounting Type:
Through Hole
Maximum Emitter Base Voltage:
6 V
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
350 V
Maximum Base Emitter Saturation Voltage:
2.2 V
Maximum Collector Cut-off Current:
0.1mA
Height:
16.2mm
Width:
4.9mm
Length:
15.2mm
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1.6 V
Maximum Operating Temperature:
+175 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BU323
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 350V 10A 2MHz 150W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
500 @ 5A, 4.6V
Transistor Type:
NPN - Darlington
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.7V @ 250mA, 10A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Tube
Operating Temperature:
-65°C ~ 175°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
