ON Semiconductor NJD35N04T4G
Product Information
Dimensions:
6.73 x 7.49 x 2.38mm
Maximum Collector Emitter Saturation Voltage:
1.5 V
Maximum Collector Cut-off Current:
250mA
Width:
7.49mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
4 A
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
700 V
Maximum Base Emitter Saturation Voltage:
2 V
Maximum Emitter Base Voltage:
5 V
Length:
6.73mm
Pin Count:
3
Minimum DC Current Gain:
2000
Mounting Type:
Surface Mount
Maximum Power Dissipation:
45 W
Maximum Collector Emitter Voltage:
350 V
Height:
2.38mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
28 Weeks
Base Part Number:
NJD35
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 350V 4A 90MHz 45W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
2000 @ 2A, 2V
Transistor Type:
NPN - Darlington
Frequency - Transition:
90MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
1.5V @ 20mA, 2A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
350V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
45W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
50µA
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor NJD35N04T4G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor NJD35N04T4G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11963736 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11963736.
Yes. We ship NJD35N04T4G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is NJD35N04T4G. The given dimensions of the product include 6.73 x 7.49 x 2.38mm. The product has a maximum 1.5 v collector emitter saturation voltage . It has a maximum 250ma collector cut-off current . Furthermore, the product is 7.49mm wide. The product offers single transistor configuration. The product has a maximum 4 a continuous collector current . The package is a sort of dpak (to-252). It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a npn type. Additionally, it has 700 v maximum collector base voltage. In addition, the product has a maximum 2 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 6.73mm. It contains 3 pins. It features up to 2000 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 45 w maximum power dissipation. Whereas features a 350 v of collector emitter voltage (max). In addition, the height is 2.38mm. Whereas, the minimum operating temperature of the product is -65 °c. It has typical 28 weeks of manufacturer standard lead time. Base Part Number: njd35. It features bipolar (bjt) transistor npn - darlington 350v 4a 90mhz 45w surface mount dpak. Furthermore, 2000 @ 2a, 2v is the minimum DC current gain at given voltage. The transistor is a npn - darlington type. The transition frequency of the product is 90mhz. The 1.5v @ 20ma, 2a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 350v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 45w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 4a. In addition, 50µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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