Transistor Type:
NPN
Dimensions:
2.9 x 1.6 x 0.9mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
700 mW
Maximum Collector Emitter Saturation Voltage:
100 mV
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
CPH
Number of Elements per Chip:
1
Maximum DC Collector Current:
500 mA
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
31 Weeks
Base Part Number:
50C02
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 500mA 500MHz 700mW Surface Mount 3-CPH
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 10mA, 2V
Transistor Type:
NPN
Frequency - Transition:
500MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
100mV @ 10mA, 100mA
Supplier Device Package:
3-CPH
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
700mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
