Minimum DC Current Gain:
10
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
1 A
Maximum Collector Emitter Voltage:
300 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE5730
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
