ON Semiconductor MJE5730G

ON Semiconductor

Product Information

Minimum DC Current Gain:
10
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Continuous Collector Current:
1 A
Maximum Collector Emitter Voltage:
300 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
1 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE5730
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 1A 10MHz 40W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 300mA, 10V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJE5730G. It features up to 10 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.53 x 4.83 x 9.28mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 1 a continuous collector current . Whereas features a 300 v dc of collector emitter voltage (max). In addition, the height is 9.28mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.53mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -65 °c. The product has a maximum 1 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: mje5730. It features bipolar (bjt) transistor pnp 300v 1a 10mhz 40w through hole to-220ab. Furthermore, 30 @ 300ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 1v @ 200ma, 1a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 300v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3. The maximum collector current includes 1a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet MJE5730G(Technical Reference)
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Bipolar Power Transistor TO220 Pkg Assembly & Test 16/Oct/2015(PCN Assembly/Origin)
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MJE5730, 31(A)(Datasheets)
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TO-220 Case Outline Update 18/Sep/2014(PCN Design/Specification)

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