Microsemi Corporation JAN2N2905A
Product Information
Manufacturer Standard Lead Time:
30 Weeks
Current - Collector (Ic) (Max):
600mA
Detailed Description:
Bipolar (BJT) Transistor PNP 60V 600mA 800mW Through Hole TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 150mA, 10V
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.6V @ 50mA, 500mA
Series:
Military, MIL-PRF-19500/290
Package / Case:
TO-205AD, TO-39-3 Metal Can
Supplier Device Package:
TO-39
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
800mW
Customer Reference:
Notification:
QPL or Military Specs are for reference only. Parts are not for military use. See Terms and Conditions.
Current - Collector Cutoff (Max):
1µA
Manufacturer:
Microsemi Corporation
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FAQs
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We accept all major payment methods for all products including ET11915236. Please check your shopping cart at the time of order.
You can order Microsemi Corporation brand products with JAN2N2905A directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Microsemi Corporation JAN2N2905A. You can also check on our website or by contacting our customer support team for further order details on Microsemi Corporation JAN2N2905A.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11915236 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Microsemi Corporation" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11915236.
Yes. We ship JAN2N2905A Internationally to many countries around the world.
This is manufactured by Microsemi Corporation. The manufacturer part number is JAN2N2905A. It has typical 30 weeks of manufacturer standard lead time. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 800mw through hole to-39. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. The product military, mil-prf-19500/290, is a highly preferred choice for users. Moreover, the product comes in to-205ad, to-39-3 metal can. to-39 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 200°c (tj) operating temperature range. The maximum power of the product is 800mw. Note: qpl or military specs are for reference only. parts are not for military use. see terms and conditions.. In addition, 1µa is the maximum current at collector cutoff. The microsemi corporation's product offers user-desired applications.
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