Minimum DC Current Gain:
200
Transistor Type:
PNP
Dimensions:
6.5 x 2.3 x 5.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
15 W
Maximum Continuous Collector Current:
-5 A
Maximum Collector Emitter Voltage:
-50 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Height:
5.5mm
Width:
2.3mm
Length:
6.5mm
Package Type:
IPAK (7518-003)
Number of Elements per Chip:
1
Maximum Collector Emitter Saturation Voltage:
-430 mV
Maximum Emitter Base Voltage:
-6 V
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3 + Tab
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
8 Weeks
Base Part Number:
2SA2039
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 5A 360MHz 800mW Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
360MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
430mV @ 100mA, 2A
Supplier Device Package:
TP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Bulk
Operating Temperature:
150°C (TJ)
Power - Max:
800mW
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
