Dimensions:
6.5 x 5.5 x 2.3mm
Maximum Collector Emitter Saturation Voltage:
-500 mV
Width:
5.5mm
Transistor Configuration:
Single
Maximum Operating Frequency:
130 MHz
Package Type:
TP-FA
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
-60 V
Maximum Base Emitter Saturation Voltage:
-1.3 V
Maximum Emitter Base Voltage:
-6 V
Length:
6.5mm
Maximum DC Collector Current:
8 A
Pin Count:
3
Minimum DC Current Gain:
35
Mounting Type:
Surface Mount
Maximum Power Dissipation:
20 W
Maximum Collector Emitter Voltage:
50 V
Height:
2.3mm
Base Part Number:
2SB1204
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 8A 130MHz 1W Surface Mount 2-TP-FA
DC Current Gain (hFE) (Min) @ Ic, Vce:
140 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
130MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 4A
Series:
*
Supplier Device Package:
2-TP-FA
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
Power - Max:
1W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
This is manufactured by ON Semiconductor. The manufacturer part number is 2SB1204S-TL-E. The given dimensions of the product include 6.5 x 5.5 x 2.3mm. The product has a maximum -500 mv collector emitter saturation voltage . Furthermore, the product is 5.5mm wide. The product offers single transistor configuration. It carries 130 mhz of maximum operating frequency. The package is a sort of tp-fa. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has -60 v maximum collector base voltage. In addition, the product has a maximum -1.3 v base emitter saturation voltage . It features a -6 v of maximum emitter base voltage. Its accurate length is 6.5mm. Moreover, it has a maximum DC collector current of 8 a. It contains 3 pins. It features up to 35 of minimum DC current gain. The product is available in surface mount configuration. Provides up to 20 w maximum power dissipation. Whereas features a 50 v of collector emitter voltage (max). In addition, the height is 2.3mm. Base Part Number: 2sb1204. It features bipolar (bjt) transistor pnp 50v 8a 130mhz 1w surface mount 2-tp-fa. Furthermore, 140 @ 500ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 130mhz. The 500mv @ 200ma, 4a is the maximum Vce saturation. 2-tp-fa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 1w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 8a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
Reviews
Don’t hesitate to ask questions for better clarification.