ON Semiconductor 2N4922G
Product Information
Transistor Type:
NPN
Dimensions:
7.8 x 3 x 11.1mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Collector Emitter Saturation Voltage:
0.6 V dc
Maximum Collector Base Voltage:
60 V dc
Maximum Collector Emitter Voltage:
60 V dc
Maximum Base Emitter Saturation Voltage:
1.3 V dc
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V dc
Package Type:
TO-225
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 (Continuous) A, 3 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
38 Weeks
Base Part Number:
2N4922
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 1A 3MHz 30W Through Hole TO-225AA
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 500mA, 1V
Transistor Type:
NPN
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
TO-225AA
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Bulk
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
30W
Customer Reference:
Package / Case:
TO-225AA, TO-126-3
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
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Yes. We ship 2N4922G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N4922G. The transistor is a npn type. The given dimensions of the product include 7.8 x 3 x 11.1mm. The product is available in through hole configuration. Provides up to 30 w maximum power dissipation. The product has a maximum 0.6 v dc collector emitter saturation voltage . Additionally, it has 60 v dc maximum collector base voltage. Whereas features a 60 v dc of collector emitter voltage (max). In addition, the product has a maximum 1.3 v dc base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 5 v dc of maximum emitter base voltage. The package is a sort of to-225. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 1 (continuous) a, 3 (peak) a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 38 weeks of manufacturer standard lead time. Base Part Number: 2n4922. It features bipolar (bjt) transistor npn 60v 1a 3mhz 30w through hole to-225aa. Furthermore, 30 @ 500ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 3mhz. The 600mv @ 100ma, 1a is the maximum Vce saturation. to-225aa is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 30w. Moreover, the product comes in to-225aa, to-126-3. The maximum collector current includes 1a. In addition, 500µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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