Toshiba Semiconductor and Storage TMBT3904,LM
Product Information
Manufacturer Standard Lead Time:
16 Weeks
Base Part Number:
TMBT3904
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 150mA 300MHz 320mW Surface Mount SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 1V
Transistor Type:
NPN
Frequency - Transition:
300MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 5mA, 50mA
Supplier Device Package:
SOT-23-3
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
Power - Max:
320mW
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Current - Collector (Ic) (Max):
150mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Single Bipolar Transistors category are shipped in lowest possible time.
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Yes. We ship TMBT3904,LM Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TMBT3904,LM. It has typical 16 weeks of manufacturer standard lead time. Base Part Number: tmbt3904. It features bipolar (bjt) transistor npn 50v 150ma 300mhz 320mw surface mount sot-23-3. Furthermore, 100 @ 10ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in surface mount configuration. The 300mv @ 5ma, 50ma is the maximum Vce saturation. sot-23-3 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 320mw. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The maximum collector current includes 150ma. In addition, 100na (icbo) is the maximum current at collector cutoff. The toshiba semiconductor and storage's product offers user-desired applications.
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