ON Semiconductor 2SD1816S-E
Product Information
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2SD1816
Detailed Description:
Bipolar (BJT) Transistor NPN 100V 4A 180MHz 1W Through Hole TP
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 500mA, 5V
Transistor Type:
NPN
Frequency - Transition:
180MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 200mA, 2A
Supplier Device Package:
TP
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Bulk
Operating Temperature:
Power - Max:
1W
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
1µA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
Yes. You can also search 2SD1816S-E on website for other similar products.
We accept all major payment methods for all products including ET11880662. Please check your shopping cart at the time of order.
You can order ON Semiconductor brand products with 2SD1816S-E directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor 2SD1816S-E. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor 2SD1816S-E.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11880662 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11880662.
Yes. We ship 2SD1816S-E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2SD1816S-E. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2sd1816. It features bipolar (bjt) transistor npn 100v 4a 180mhz 1w through hole tp. Furthermore, 70 @ 500ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 180mhz. The product is available in through hole configuration. The 400mv @ 200ma, 2a is the maximum Vce saturation. tp is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, bulk is the available packaging type of the product. The maximum power of the product is 1w. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The maximum collector current includes 4a. In addition, 1µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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