ON Semiconductor 2N6109G
Product Information
Transistor Type:
PNP
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
7 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N6109
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 7A 10MHz 40W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 2.5A, 4V
Transistor Type:
PNP
Frequency - Transition:
10MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 3A, 7A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
40W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
7A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. We ship 2N6109G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2N6109G. The transistor is a pnp type. The given dimensions of the product include 10.28 x 4.82 x 15.75mm. The product is available in through hole configuration. Provides up to 40 w maximum power dissipation. The product has a maximum 3.5 v collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 50 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-220ab. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 7 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2n6109. It features bipolar (bjt) transistor pnp 50v 7a 10mhz 40w through hole to-220. Furthermore, 30 @ 2.5a, 4v is the minimum DC current gain at given voltage. The transition frequency of the product is 10mhz. The 3.5v @ 3a, 7a is the maximum Vce saturation. to-220 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 40w. Moreover, the product comes in to-220-3. The maximum collector current includes 7a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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