ON Semiconductor MJL21194G

ON Semiconductor

Product Information

Transistor Type:
NPN
Dimensions:
20.3 x 5.3 x 29mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Collector Emitter Voltage:
250 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-3BPL
Number of Elements per Chip:
1
Maximum DC Collector Current:
16 A
Maximum Collector Base Voltage:
400 V
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
34 Weeks
Base Part Number:
MJL21194
Detailed Description:
Bipolar (BJT) Transistor NPN 250V 16A 4MHz 200W Through Hole TO-264
DC Current Gain (hFE) (Min) @ Ic, Vce:
25 @ 8A, 5V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 3.2A, 16A
Supplier Device Package:
TO-264
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-264-3, TO-264AA
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
100µA
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJL21194G. The transistor is a npn type. The given dimensions of the product include 20.3 x 5.3 x 29mm. The product is available in through hole configuration. Provides up to 200 w maximum power dissipation. Whereas features a 250 v of collector emitter voltage (max). It carries 1 mhz of maximum operating frequency. It features a 5 v of maximum emitter base voltage. The package is a sort of to-3bpl. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 16 a. Additionally, it has 400 v maximum collector base voltage. It contains 3 pins. The product offers single transistor configuration. It has typical 34 weeks of manufacturer standard lead time. Base Part Number: mjl21194. It features bipolar (bjt) transistor npn 250v 16a 4mhz 200w through hole to-264. Furthermore, 25 @ 8a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 4mhz. The 4v @ 3.2a, 16a is the maximum Vce saturation. to-264 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 200w. Moreover, the product comes in to-264-3, to-264aa. The maximum collector current includes 16a. In addition, 100µa is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Dev Site Material Chgs 22/Apr/2020(PCN Assembly/Origin)
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MJL21193, 94(Datasheets)

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