ON Semiconductor MJH11021G
Product Information
Dimensions:
16.26 x 5.3 x 21.08mm
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Collector Cut-off Current:
5mA
Width:
5.3mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
15 A
Package Type:
TO-247
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
250 V
Maximum Base Emitter Saturation Voltage:
3.8 V
Maximum Emitter Base Voltage:
5 V
Length:
16.26mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Maximum Collector Emitter Voltage:
250 V
Height:
21.08mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
22 Weeks
Base Part Number:
MJH11021
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 250V 15A 3MHz 150W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
400 @ 10A, 5V
Transistor Type:
PNP - Darlington
Frequency - Transition:
3MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 150mA, 15A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
250V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
150W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
1mA
Manufacturer:
ON Semiconductor
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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Yes. We ship MJH11021G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is MJH11021G. The given dimensions of the product include 16.26 x 5.3 x 21.08mm. The product has a maximum 4 v collector emitter saturation voltage . It has a maximum 5ma collector cut-off current . Furthermore, the product is 5.3mm wide. The product offers single transistor configuration. The product has a maximum 15 a continuous collector current . The package is a sort of to-247. It consists of 1 elements per chip. It has a maximum operating temperature of +150 °c. The transistor is a pnp type. Additionally, it has 250 v maximum collector base voltage. In addition, the product has a maximum 3.8 v base emitter saturation voltage . It features a 5 v of maximum emitter base voltage. Its accurate length is 16.26mm. It contains 3 pins. It features up to 100 of minimum DC current gain. The product is available in through hole configuration. Provides up to 150 w maximum power dissipation. Whereas features a 250 v of collector emitter voltage (max). In addition, the height is 21.08mm. Whereas, the minimum operating temperature of the product is -65 °c. It has typical 22 weeks of manufacturer standard lead time. Base Part Number: mjh11021. It features bipolar (bjt) transistor pnp - darlington 250v 15a 3mhz 150w through hole to-247. Furthermore, 400 @ 10a, 5v is the minimum DC current gain at given voltage. The transistor is a pnp - darlington type. The transition frequency of the product is 3mhz. The 4v @ 150ma, 15a is the maximum Vce saturation. to-247 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 250v. In addition, tube is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 150w. Moreover, the product comes in to-247-3. The maximum collector current includes 15a. In addition, 1ma is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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