Transistor Type:
NPN
Dimensions:
10.28 x 4.82 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
83 W
Maximum Collector Emitter Saturation Voltage:
0.8 V
Maximum Collector Emitter Voltage:
80 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
20 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
22 Weeks
Base Part Number:
D44VH10
Detailed Description:
Bipolar (BJT) Transistor NPN 80V 15A 50MHz 83W Through Hole TO-220AB
Transistor Type:
NPN
Frequency - Transition:
50MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 400mA, 8A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
83W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
15A
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 1V
Manufacturer:
ON Semiconductor
