Dimensions:
2 x 2 x 0.75mm
Maximum Collector Emitter Saturation Voltage:
0.12 V
Width:
2mm
Transistor Configuration:
Single
Maximum Operating Frequency:
100 MHz
Package Type:
WDFN
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
NPN
Maximum Collector Base Voltage:
12 V dc
Maximum Base Emitter Saturation Voltage:
0.9 V
Maximum Emitter Base Voltage:
6 V
Length:
2mm
Maximum DC Collector Current:
5 A
Pin Count:
3
Minimum DC Current Gain:
200
Mounting Type:
Surface Mount
Maximum Power Dissipation:
1.5 W
Maximum Collector Emitter Voltage:
12 V
Height:
0.75mm
Minimum Operating Temperature:
-55 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
NSS12501
Detailed Description:
Bipolar (BJT) Transistor NPN 12V 5A 150MHz 875mW Surface Mount 3-WDFN (2x2)
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 2A, 2V
Transistor Type:
NPN
Frequency - Transition:
150MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
120mV @ 400mA, 4A
Supplier Device Package:
3-WDFN (2x2)
Voltage - Collector Emitter Breakdown (Max):
12V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
875mW
Customer Reference:
Package / Case:
3-WDFN Exposed Pad
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
