Transistor Type:
PNP
Dimensions:
6.9 x 2.5 x 4.5mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
900 mW
Maximum Collector Emitter Saturation Voltage:
-500 mV
Maximum Collector Base Voltage:
-60 V
Maximum Collector Emitter Voltage:
50 V
Maximum Base Emitter Saturation Voltage:
-1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
-5 V
Package Type:
NMP
Number of Elements per Chip:
1
Maximum DC Collector Current:
1 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
2SA1705
Detailed Description:
Bipolar (BJT) Transistor PNP 50V 1A 150MHz 900mW Through Hole 3-NMP
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 100mA, 2V
Transistor Type:
PNP
Frequency - Transition:
150MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
Supplier Device Package:
3-NMP
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
Power - Max:
900mW
Customer Reference:
Package / Case:
SC-71
Current - Collector (Ic) (Max):
1A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
