Transistor Type:
NPN
Dimensions:
9.28 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
50 W
Maximum Collector Emitter Voltage:
450 V
Maximum Operating Frequency:
4 MHz
Maximum Emitter Base Voltage:
5 V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum DC Collector Current:
2 A
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
47 Weeks
Base Part Number:
BUX85
Detailed Description:
Bipolar (BJT) Transistor NPN 450V 2A 4MHz 50W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 100mA, 5V
Transistor Type:
NPN
Frequency - Transition:
4MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1V @ 200mA, 1A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
450V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
50W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
2A
Current - Collector Cutoff (Max):
200µA
Manufacturer:
ON Semiconductor
