This is manufactured by Central Semiconductor Corp. The manufacturer part number is PN2906A. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 200mhz 625mw through hole to-92. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. to-92 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). In addition, 10na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
PN2906(A).PN2907(A)(Datasheets)
RoHS3 Cert(Environmental Information)
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This is manufactured by Central Semiconductor Corp. The manufacturer part number is PN2906A. The maximum collector current includes 600ma. It features bipolar (bjt) transistor pnp 60v 600ma 200mhz 625mw through hole to-92. Furthermore, 100 @ 150ma, 10v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 200mhz. The product is available in through hole configuration. The 1.6v @ 50ma, 500ma is the maximum Vce saturation. to-92 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 60v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). In addition, 10na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
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