Minimum DC Current Gain:
5
Transistor Type:
NPN
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
30 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
90 (Breakdown) V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
2.5 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Base Part Number:
MJF3055
Detailed Description:
Bipolar (BJT) Transistor NPN 90V 10A 2MHz 2W Through Hole TO-220FP
DC Current Gain (hFE) (Min) @ Ic, Vce:
20 @ 4A, 4V
Transistor Type:
NPN
Frequency - Transition:
2MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2.5V @ 3.3A, 10A
Supplier Device Package:
TO-220FP
Voltage - Collector Emitter Breakdown (Max):
90V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1µA
Manufacturer:
ON Semiconductor
