Dimensions:
15.75 x 10.28 x 4.82mm
Maximum Collector Emitter Saturation Voltage:
2 V
Maximum Collector Cut-off Current:
20µA
Width:
10.28mm
Transistor Configuration:
Single
Maximum Continuous Collector Current:
8 A
Package Type:
TO-220AB
Number of Elements per Chip:
1
Maximum Operating Temperature:
+150 °C
Transistor Type:
PNP
Maximum Collector Base Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
4.5 V
Maximum Emitter Base Voltage:
5 V
Length:
15.75mm
Pin Count:
3
Minimum DC Current Gain:
100
Mounting Type:
Through Hole
Maximum Power Dissipation:
75 W
Maximum Collector Emitter Voltage:
60 V
Height:
4.82mm
Minimum Operating Temperature:
-65 °C
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2N6040
Detailed Description:
Bipolar (BJT) Transistor PNP - Darlington 60V 8A 75W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 4A, 4V
Transistor Type:
PNP - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 16mA, 4A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
75W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
Current - Collector Cutoff (Max):
20µA
Manufacturer:
ON Semiconductor
