Minimum DC Current Gain:
1000
Transistor Type:
NPN
Dimensions:
15.75 x 10.28 x 4.82mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
65 W
Maximum Continuous Collector Current:
8 A
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Collector Cut-off Current:
0.5mA
Height:
4.82mm
Width:
10.28mm
Length:
15.75mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
4 V
Maximum Emitter Base Voltage:
5 V
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
44 Weeks
Base Part Number:
TIP120
Detailed Description:
Bipolar (BJT) Transistor NPN - Darlington 60V 5A 2W Through Hole TO-220
DC Current Gain (hFE) (Min) @ Ic, Vce:
1000 @ 3A, 3V
Transistor Type:
NPN - Darlington
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
4V @ 20mA, 5A
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
5A
Current - Collector Cutoff (Max):
500µA
Manufacturer:
ON Semiconductor
