Transistor Type:
NPN
Dimensions:
16.2 x 15.2 x 4.9mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
125 W
Maximum Collector Emitter Saturation Voltage:
3.5 V
Maximum Collector Base Voltage:
160 V
Maximum Collector Emitter Voltage:
160 V
Maximum Base Emitter Saturation Voltage:
3.9 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
SOT-93
Number of Elements per Chip:
1
Maximum DC Collector Current:
16 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE4343
Detailed Description:
Bipolar (BJT) Transistor NPN 160V 16A 1MHz 125W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 8A, 2V
Transistor Type:
NPN
Frequency - Transition:
1MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
3.5V @ 2A, 16A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
160V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
125W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
16A
Current - Collector Cutoff (Max):
750µA
Manufacturer:
ON Semiconductor
