Transistor Type:
NPN
Dimensions:
39.37 x 26.67 x 8.51mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
115 W
Maximum Collector Emitter Saturation Voltage:
5 V
Maximum Collector Base Voltage:
100 V
Maximum Collector Emitter Voltage:
60 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
TO-204
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+200 °C
Pin Count:
2
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
9 Weeks
Base Part Number:
2N3055
Detailed Description:
Bipolar (BJT) Transistor NPN 60V 15A 6MHz 115W Through Hole TO-204 (TO-3)
DC Current Gain (hFE) (Min) @ Ic, Vce:
10 @ 4A, 2V
Transistor Type:
NPN
Frequency - Transition:
6MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 7A, 15A
Supplier Device Package:
TO-204 (TO-3)
Voltage - Collector Emitter Breakdown (Max):
60V
Packaging:
Tray
Operating Temperature:
-65°C ~ 200°C (TJ)
Power - Max:
115W
Customer Reference:
Package / Case:
TO-204AA, TO-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
700µA
Manufacturer:
ON Semiconductor
