Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Saturation Voltage:
0.6 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.8 V dc
Maximum Operating Frequency:
10 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
MJD253
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.4W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
