ON Semiconductor MJD253T4G

MJD253T4G ON Semiconductor
MJD253T4G
MJD253T4G
ET11670786
ON Semiconductor

Product Information

Transistor Type:
PNP
Dimensions:
6.73 x 6.22 x 2.38mm
Mounting Type:
Surface Mount
Maximum Power Dissipation:
12.5 W
Maximum Collector Emitter Saturation Voltage:
0.6 V dc
Maximum Collector Base Voltage:
100 V dc
Maximum Collector Emitter Voltage:
100 V
Maximum Base Emitter Saturation Voltage:
1.8 V dc
Maximum Operating Frequency:
10 MHz
Maximum Emitter Base Voltage:
7 V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Maximum DC Collector Current:
4 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
50 Weeks
Base Part Number:
MJD253
Detailed Description:
Bipolar (BJT) Transistor PNP 100V 4A 40MHz 1.4W Surface Mount DPAK
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 200mA, 1V
Transistor Type:
PNP
Frequency - Transition:
40MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
600mV @ 100mA, 1A
Supplier Device Package:
DPAK
Voltage - Collector Emitter Breakdown (Max):
100V
Packaging:
Cut Tape (CT)
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
1.4W
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Current - Collector (Ic) (Max):
4A
Current - Collector Cutoff (Max):
100nA (ICBO)
Manufacturer:
ON Semiconductor
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is MJD253T4G. The transistor is a pnp type. The given dimensions of the product include 6.73 x 6.22 x 2.38mm. The product is available in surface mount configuration. Provides up to 12.5 w maximum power dissipation. The product has a maximum 0.6 v dc collector emitter saturation voltage . Additionally, it has 100 v dc maximum collector base voltage. Whereas features a 100 v of collector emitter voltage (max). In addition, the product has a maximum 1.8 v dc base emitter saturation voltage . It carries 10 mhz of maximum operating frequency. It features a 7 v of maximum emitter base voltage. The package is a sort of dpak (to-252). It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 4 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 50 weeks of manufacturer standard lead time. Base Part Number: mjd253. It features bipolar (bjt) transistor pnp 100v 4a 40mhz 1.4w surface mount dpak. Furthermore, 40 @ 200ma, 1v is the minimum DC current gain at given voltage. The transition frequency of the product is 40mhz. The 600mv @ 100ma, 1a is the maximum Vce saturation. dpak is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 100v. In addition, cut tape (ct) is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 1.4w. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum collector current includes 4a. In addition, 100na (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.

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Datasheet(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)
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Mult Devices 28/Aug/2017(PCN Assembly/Origin)
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MJD243,253(Datasheets)

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FAQs

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