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This is manufactured by Central Semiconductor Corp. The manufacturer part number is 2N5551. The maximum collector current includes 600ma. It features bipolar (bjt) transistor npn 160v 600ma 300mhz 625mw through hole to-92. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a npn type. The transition frequency of the product is 300mhz. The product is available in through hole configuration. The 200mv @ 5ma, 50ma is the maximum Vce saturation. to-92 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 160v. In addition, bulk is the available packaging type of the product. The product has -65°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 625mw. Moreover, the product comes in to-226-3, to-92-3 (to-226aa). In addition, 50na (icbo) is the maximum current at collector cutoff. The central semiconductor corp's product offers user-desired applications.
For more information please check the datasheets.
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