ON Semiconductor 2SC6082-1E
Product Information
Transistor Type:
NPN
Dimensions:
10.16 x 4.7 x 15.87mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
23 W
Maximum Collector Emitter Saturation Voltage:
400 mV
Maximum Collector Base Voltage:
60 V
Maximum Collector Emitter Voltage:
60 V
Maximum Base Emitter Saturation Voltage:
1.2 V
Maximum Operating Frequency:
1 MHz
Maximum Emitter Base Voltage:
6 V
Package Type:
TO-220F
Number of Elements per Chip:
1
Maximum DC Collector Current:
15 A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
2SC6082
Detailed Description:
Bipolar (BJT) Transistor NPN 50V 15A 195MHz 2W Through Hole TO-220F-3SG
DC Current Gain (hFE) (Min) @ Ic, Vce:
200 @ 330mA, 2V
Transistor Type:
NPN
Frequency - Transition:
195MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
400mV @ 375mA, 7.5A
Supplier Device Package:
TO-220F-3SG
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Tube
Operating Temperature:
150°C (TJ)
Power - Max:
2W
Customer Reference:
Package / Case:
TO-220-3 Full Pack
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
10µA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
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We use our internationally recognized delivery partners UPS/DHL. Collection of ET11594456 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11594456.
Yes. We ship 2SC6082-1E Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is 2SC6082-1E. The transistor is a npn type. The given dimensions of the product include 10.16 x 4.7 x 15.87mm. The product is available in through hole configuration. Provides up to 23 w maximum power dissipation. The product has a maximum 400 mv collector emitter saturation voltage . Additionally, it has 60 v maximum collector base voltage. Whereas features a 60 v of collector emitter voltage (max). In addition, the product has a maximum 1.2 v base emitter saturation voltage . It carries 1 mhz of maximum operating frequency. It features a 6 v of maximum emitter base voltage. The package is a sort of to-220f. It consists of 1 elements per chip. Moreover, it has a maximum DC collector current of 15 a. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: 2sc6082. It features bipolar (bjt) transistor npn 50v 15a 195mhz 2w through hole to-220f-3sg. Furthermore, 200 @ 330ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 195mhz. The 400mv @ 375ma, 7.5a is the maximum Vce saturation. to-220f-3sg is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 2w. Moreover, the product comes in to-220-3 full pack. The maximum collector current includes 15a. In addition, 10µa (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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