Minimum DC Current Gain:
12
Transistor Type:
NPN
Dimensions:
16.26 x 5.3 x 21.08mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
200 W
Maximum Continuous Collector Current:
15 A
Maximum Collector Emitter Voltage:
230 V dc
Height:
21.08mm
Width:
5.3mm
Length:
16.26mm
Package Type:
TO-247
Number of Elements per Chip:
1
Minimum Operating Temperature:
-65 °C
Maximum Collector Emitter Saturation Voltage:
2 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
36 Weeks
Base Part Number:
MJW3281
Detailed Description:
Bipolar (BJT) Transistor NPN 230V 15A 30MHz 200W Through Hole TO-247
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 7A, 5V
Transistor Type:
NPN
Frequency - Transition:
30MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
2V @ 1A, 10A
Supplier Device Package:
TO-247
Voltage - Collector Emitter Breakdown (Max):
230V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
200W
Customer Reference:
Package / Case:
TO-247-3
Current - Collector (Ic) (Max):
15A
Current - Collector Cutoff (Max):
50µA (ICBO)
Manufacturer:
ON Semiconductor
