ON Semiconductor BD810G
Product Information
Minimum DC Current Gain:
15
Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 9.28mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
90 W
Maximum Continuous Collector Current:
10 A
Maximum Collector Emitter Voltage:
80 V dc
Height:
9.28mm
Width:
4.83mm
Length:
10.53mm
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Collector Emitter Saturation Voltage:
1.1 V dc
Maximum Emitter Base Voltage:
5 V dc
Configuration:
Single
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
BD810
Detailed Description:
Bipolar (BJT) Transistor PNP 80V 10A 1.5MHz 90W Through Hole TO-220AB
DC Current Gain (hFE) (Min) @ Ic, Vce:
15 @ 4A, 2V
Transistor Type:
PNP
Frequency - Transition:
1.5MHz
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
1.1V @ 300mA, 3A
Supplier Device Package:
TO-220AB
Voltage - Collector Emitter Breakdown (Max):
80V
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
90W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
10A
Current - Collector Cutoff (Max):
1mA (ICBO)
Manufacturer:
ON Semiconductor
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FAQs
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You can order ON Semiconductor brand products with BD810G directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Transistors - Bipolar (BJT) - Single category are shipped in lowest possible time.
You will get a confirmation email regarding your order of ON Semiconductor BD810G. You can also check on our website or by contacting our customer support team for further order details on ON Semiconductor BD810G.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET11566006 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "ON Semiconductor" products on our website by using Enrgtech's Unique Manufacturing Part Number ET11566006.
Yes. We ship BD810G Internationally to many countries around the world.
This is manufactured by ON Semiconductor. The manufacturer part number is BD810G. It features up to 15 of minimum DC current gain. The transistor is a pnp type. The given dimensions of the product include 10.53 x 4.83 x 9.28mm. The product is available in through hole configuration. Provides up to 90 w maximum power dissipation. The product has a maximum 10 a continuous collector current . Whereas features a 80 v dc of collector emitter voltage (max). In addition, the height is 9.28mm. Furthermore, the product is 4.83mm wide. Its accurate length is 10.53mm. The package is a sort of to-220. It consists of 1 elements per chip. Whereas, the minimum operating temperature of the product is -55 °c. The product has a maximum 1.1 v dc collector emitter saturation voltage . It features a 5 v dc of maximum emitter base voltage. The product is available in single configuration. It has a maximum operating temperature of +150 °c. It contains 3 pins. The product offers single transistor configuration. It has typical 2 weeks of manufacturer standard lead time. Base Part Number: bd810. It features bipolar (bjt) transistor pnp 80v 10a 1.5mhz 90w through hole to-220ab. Furthermore, 15 @ 4a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 1.5mhz. The 1.1v @ 300ma, 3a is the maximum Vce saturation. to-220ab is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 80v. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 90w. Moreover, the product comes in to-220-3. The maximum collector current includes 10a. In addition, 1ma (icbo) is the maximum current at collector cutoff. The on semiconductor's product offers user-desired applications.
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